[15a-1B-1~10] 21.1 Joint Session K

[15a-1B-10] Optical Anisotropy in (010) Plane of β-Ga₂O₃ Crystals

〇Takeyoshi Onuma^1,2, Shingo Saito², Kohei Sasaki^3,2, Tatekazu Masui³, Tomohiro Yamaguchi¹, Tohru Honda¹, Masataka Higashiwaki² (1.Kogakuin Univ., 2.NICT, 3.Tamura Corp.)

Keywords:Gallium Oxide,optical property,velence band

Monoclinic β-Ga₂O₃ has a wide bandgap-energy (E_g). It has attracted much attention because of its potential use in UV transparent electrodes, photo detectors, and field-effect transistors. Despite its superior material properties, the complexity of the optical processes in β-Ga₂O₃ even varies experimental E_g values at RT from 4.4 to 5.0 eV.In this work, optical anisotropy in (010) plane of β-Ga₂O₃ crystals are investigated for further understanding of the E_g in β-Ga₂O₃.