The 76th JSAP Autumn Meeting, 2015

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Joint Session K » 21.1 Joint Session K

[15a-1B-1~10] 21.1 Joint Session K

Tue. Sep 15, 2015 9:00 AM - 11:45 AM 1B (133+134)

座長:大島 孝仁(東工大)

9:30 AM - 9:45 AM

△ [15a-1B-3] Electrical Properties of Sn-Doped alpha-Ga2O3 Films Grown on Annealed Buffer Layer

〇Kazuaki Akaiwa1, Kentaro Kaneko1, Shizuo Fujita1 (1.Kyoto Univ.)

Keywords:gallium oxide,doping,oxide semiconductor