The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

Joint Session K » 21.1 Joint Session K

[16a-1B-1~12] 21.1 Joint Session K

Wed. Sep 16, 2015 9:00 AM - 12:15 PM 1B (133+134)

座長:川原村 敏幸(高知工科大)

10:15 AM - 10:30 AM

[16a-1B-6] Physical property control of zinc oxide thin film by hydrogen ion beam irradiation at low temperature

〇Ryo Nakayama1, Mitsuhiko Maesato1, Takashi Nagaoka2, Makoto Arita2, HIroshi Kitagawa1,3 (1.Kyoto Univ., 2.Kyushu Univ., 3.JST-CREST)

Keywords:zinc oxide,hydrogen,ion beam

Hydrogen introduction is a powerful method to control physical properties of materials. However conventional methods are available to a few materials and need very long time to introduce much hydrogen. Now we pay attention to the hydrogen ion beam irradiation as an efficient way of the hydrogen introduction. In this study, we introduced hydrogen into zinc oxide thin films at low temperature by our home-made hydrogen ion beam apparatus. Hydrogen ion beam irradiation effects were studied by in-situ variable-temperature electrical conductivity measurements.