[15p-1B-1~18] 21.1 Joint Session K

[15p-1B-8] Effects of impurity hydrogen on subgap defects in amorphous In-Ga-Zn-O

Haochun Tang¹, 〇Toshio Kamiya^1,2, Kyohei Ishikawa¹, Keisuke Ide¹, Hidenori Hiramatsu¹, Shigenori Ueda³, Naoki Ohashi^2,3, Hideya Kumomi², Hideo Hosono^1,2 (1.MSL Tokyo Tech, 2.MCES Tokyo Tech, 3.NIMS)

Keywords:amorphous oxide semiconductor,near-VBM defects,impurity hydrogen

Effects of impurity hydrogen on subgap defects in amorphous In-Ga-Zn-O are discussed. It was found that impurity hydrogen causes strong reduction reaction if no oxygen is included in the sputtering plasma, and segregate metallic In. Reduction of impurity hydrogen eliminates this effect and also reduces the optimum oxygen partial pressure.