The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

Joint Session K » 21.1 Joint Session K

[16a-1B-1~12] 21.1 Joint Session K

Wed. Sep 16, 2015 9:00 AM - 12:15 PM 1B (133+134)

座長:川原村 敏幸(高知工科大)

12:00 PM - 12:15 PM

[16a-1B-12] Plasmonic technology in wide-gap oxide semiconductors:
Fabricartions of reflection-type thermal-shielding sheets with visible/electromagnetic transmissions

〇Hiroaki Matsui1, Shinya Furuta2, Takayuki Hasebe3, Noriyuki Hasuike4, Hitoshi Tabata1 (1.The Univ. of Tokyo, 2.Tomoe Works, 3.Custum Central Lab., 4.Kyoto Inst. of Tech.)

Keywords:Wide-gap oxide semiconductor,Surface plasmons,Nanomaterials

Smart window applications based on functionalities of thermal-shielding with a reflection-type are important to realize comfortable urban environment. In this presentation, we introduce plasmonic technology based on oxide semiconductors towards reflection thermal-shielding sheets with visible/electromagnetic transmissions. Near-field interactions at gap space between nanoparticles produce selective reflection properties in the near- and mid-infrared region. This study provides new insight of optical manipulation in oxide semiconductors.