The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /MEMS/Integration technology

[14a-1C-1~10] 13.4 Si wafer processing /MEMS/Integration technology

Mon. Sep 14, 2015 9:00 AM - 11:45 AM 1C (135)

座長:佐々木 実(豊田工大),石井 仁(豊橋技科大)

9:45 AM - 10:00 AM

[14a-1C-4] Q factor enhancement of a carbon nanomechanical resonator by fluorine surface modification

〇Reo Kometani1, Takumi Miyakoshi1, Etsuo Maeda1 (1.The Univ. of Tokyo)

Keywords:nanomechanical resonator,Q factor,Surface modification

In this study, Q factor improvement of carbon mechanical resonator was tried by surface modification using XeF2 gas. And also, the relationship between resonance, process condition of surface modification and surface condition of a carbon nanomechanical resonator was evaluated. As a result, increase in Q factor depended on the exposure time of XeF2 gas. And, we found that the Q factor improvement ratio was approximately 1.7 after 60-sec fluorination.