[14a-1C-1~10] 13.4 Si wafer processing /MEMS/Integration technology

[14a-1C-9] Process Issues in Optical Integrated Circuits using Silicon Photonics Technology (IV)
Developments on Ge/Si Selective Epitaxial Growth Processes for Photodetector

〇Keizo Kinoshita¹, Shigekazu Okumura¹, Junichi Fujikata¹, Tsuyoshi Horikawa^1,2, Tohru Mogami¹ (1.PETRA, 2.AIST)

Keywords:silicon photonics,Ge,epitaxy

Optical signal is converted to electrical signal by photodetector made of Ge epitaxial pattern in silicon photonics devices. Low dark current is the most important characteristics of the photodetector. For this target, low defect density, lateral growth free, Si capped Ge pattern is required. Ge/Si epitaxial growth processes were investigated with changing source gas flux and HCl addition for in-situ etch during Ge growth, and achieved fine Ge/Si epitaxial pattern.