[14a-1D-1~11] 15.4 III-V-group nitride crystals

△ [14a-1D-6] Enhancement of light output power of amber light-emitting diodes by
strain-compensated AlN/AlGaN barriers

〇Daisuke Iida¹, Shen Lu¹, Sota Hirahara¹, Kazumasa Niwa², Satoshi Kamiyama², Kazuhiro Ohkawa¹ (1.Tokyo Univ. of Sci., 2.Meijo Univ.)

Keywords:light-emitting diode