[14a-1F-1~2] 8.9 Plasma Electronics Award Speech

[14a-1F-1] [Plasma Electronics Award Speech] Effect of Open Area Ratio and Pattern Structure on Fluctuations in Critical Dimension and Si Recess

〇Nobuyuki Kuboi¹, Tetsuya Tatsumi¹, Fukasawa Masanaga¹, Takashi Kinoshita¹, Jun Komachi¹, Hisahiro Ansai¹ (1.Sony Corporation)

Keywords:etching,critical dimension,simulation

To predict and control the critical dimension and plasma-induced damage on advanced CMOS devices, we have modeled physical phenomena and developed simulation techniques using results of etching various patterns on the wafers with different open area ratios. Analyzing results of simulations, we found that it is important to optimize both the etching process and pattern layout to improve device properties.