[14a-2B-1~10] 13.9 Optical properties and light-emitting devices

[14a-2B-6] Preparation of Europium-doped cubic GaN grown on GaAs(100) by radio frequency MBE (2)

〇Shinji Yudate¹, yuki koyama¹, akira miyata¹, sho shirakata¹ (1.Ehime Univ.)

Keywords:cubic GaN,rare earth doping

By the radio-frequency MBE, europium-doped cubic GaN films were grown on a GaAs(100) substrate. The spot RHEED pattern from cubic GaN was observed. From the PL measurements, Eu³⁺-related PL was observed. In addition, the film exhibited a broad yellow-luminescence. In order to increase Eu-related PL intensity, the improvement of the crystal quality of GaN:Eu was carried out. Under RHEED observation, the spot and streak patterns from cubic GaN were observed.