The 76th JSAP Autumn Meeting, 2015

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13 Semiconductors » 13.9 Optical properties and light-emitting devices

[14a-2B-1~10] 13.9 Optical properties and light-emitting devices

Mon. Sep 14, 2015 9:30 AM - 12:15 PM 2B (211-2)

座長:今北 健二(神戸大)

11:15 AM - 11:30 AM

[14a-2B-7] Luminescence properties of Eu-doped GaN and InGaN quantum wells

〇Junichi Takatsu1, Shuhei Yamanaka1, Masaaki Matsuda1, Atsushi Koizumi1, Takanori Kojima1, Yasufumi Fujiwara1 (1.Osaka Univ.)

Keywords:Eu doped GaN