[14a-2B-1~10] 13.9 Optical properties and light-emitting devices

[14a-2B-8] Selective analyses of strong emission centers in GaN:Eu red LED: Charge capturing properties evaluated with site-selective PDES

〇Masashi Ishii¹, Atsushi Koizumi², Yasufumi Fujiwara² (1.NIMS, 2.Osaka Univ.)

Keywords:GaN,Eu,Emission center

We evaluated capturing properties of injection charges for emission centers in GaN:Eu red LED with site-selective pulse-driven emission spectroscopy (PDES): Emission intensity dependent the back-and-forth motion of injection charges was analyzed. Monochromatic detection of the emission realized site-selectivity of emission centers. The results were explained with a local potential of the centers.