[14a-2B-1~10] 13.9 Optical properties and light-emitting devices

[14a-2B-9] Noise analyses of GaN:Eu red LED: A new application to measure charge capturing properties of emission centers

〇Masashi Ishii¹, Atsushi Koizumi², Yasufumi Fujiwara² (1.NIMS, 2.Osaka Univ.)

Keywords:GaN,Eu,Noise

We analyzed current noise of GaN:Eu red LED to identify limiting process of the emission. The noise of a conventional LED indicated Poisson distribution, while that of GaN:Eu LED provided 1/f noise. The result suggests that the limiting process is charge capturing. The 1/f spectrum had discontinuous points that can be explained with charge capturing of various emission centers in the LED.