The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[14a-2H-1~11] 6.3 Oxide electronics

Mon. Sep 14, 2015 9:00 AM - 11:45 AM 2H (222)

座長:近松 彰(東大)

10:30 AM - 10:45 AM

[14a-2H-7] Hard X-Ray Photoemission Study of LaAlO3/(Nb:)SrTiO3

〇Tomofumi Susaki1,2, Shigenori Ueda3, Kosuke Matsuzaki1,2, Toshihiro Kobayashi1, Yoshitake Toda2, Hideo Hosono1,2 (1.MSL, Tokyo Tech, 2.MCES, Tokyo Tech, 3.NIMS)

Keywords:photoemission spectroscopy,band alignment,LaAlO3/SrTiO3

We have studied electronic states of LaAlO3/SrTiO3 and LaAlO3/Nb:SrTiO3 by hard x-ray photoemission spectroscopy and have found that (i) the core levels of SrTiO3 are lowered in LaAlO3/SrTiO3 than in LaAlO3/Nb:SrTiO3, consistent with Kelvin probe measurements, and that (ii) the structure appears more clearly in the valence band spectrum of LaAlO3/SrTiO3 than in that of LaAlO3/Nb:SrTiO3.