Oral presentation

[13p-2H-1~21] 6.3 Oxide electronics

Sun. Sep 13, 2015 1:45 PM - 7:15 PM 2H (222)

座長:矢嶋赳彬(東大),藤原宏平(東北大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:00 PM

△ [13p-2H-1] Electro-deposition and characterization of Cu₂O/InP heterostructure

〇Sayaka Omi¹, Yusuke kumazaki¹, Zenji Yatabe¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.)

2:00 PM - 2:15 PM

△ [13p-2H-2] Atomic resolution imaging of LaAlO₃(100) using non-contact atomic force microscopy

〇daiki katsube¹, yutaro takase¹, hayato yamashita¹, satoshi abo¹, fujio wakaya¹, masayuki abe¹ (1.Osaka Univ.)

2:15 PM - 2:30 PM

△ [13p-2H-3] Strong electron localization at the sub-surface Ti site on a rutile TiO₂(110) surface

〇Ryota Shimizu¹, Hideyuki Kamisaka², Katsuya Iwaya³, Takeo Ohsawa⁴, Susumu Shiraki¹, Tetsuya Hasegawa², Taro Hitosugi¹ (1.Tohoku Univ., 2.Univ. of Tokyo, 3.RIKEN, 4.NIMS)

2:30 PM - 2:45 PM

△ [13p-2H-4] Resistive Switching Properties and Crystal Structural Change of Rutile TiO₂

〇MASATO SHIMOTANI¹, HIROYA MURAKAMI¹, SHOTARO TAKEUCHI¹, AKIRA SAKAI¹ (1.Osaka Univ.)

2:45 PM - 3:00 PM

△ [13p-2H-5] Resistive switching characteristics in TiO₂-based ReRAM cells with Pt or Ag top electrode

〇Yutaka Kuriyama¹, Yusuke Nishi¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

3:00 PM - 3:15 PM

[13p-2H-6] Epitaxial growth of high density epitaxial iron oxide nanodots and their switching properties for ubiquitous element ReRAM

〇Kentaro Watanabe¹, Yoshiki Maeda¹, Yuta Nakamoto¹, Hideki Matsui¹, Shotaro Takeuchi¹, Akira Sakai¹, Yoshiaki Nakamura¹ (1.Osaka Univ.)

3:15 PM - 3:30 PM

△ [13p-2H-7] Dependence of the resistive switching properties on the growth temperature in high density epitaxial Fe₃O_4-δ nanodots.

〇Yoshiki Maeda¹, Kentaro Watanabe¹, Yuta Nakamoto¹, Hideki Matsui¹, Shotaro Takeuchi¹, Akira Sakai¹, Yoshiaki Nakamura¹ (1.Osaka Univ.)

3:30 PM - 3:45 PM

△ [13p-2H-8] Topological Hall effect in BaBiO₃/SrRuO₃ heterostructures

〇Yuki Ohuchi¹, Masaki Uchida¹, Yusuke Kozuka¹, Jobu Matsuno², Masashi Kawasaki^1,2 (1.Dept. of Appl. Phys., the Univ. of Tokyo, 2.RIKEN CEMS)

3:45 PM - 4:00 PM

△ [13p-2H-9] Specific Hall effect at a SrTiO₃ interface in low carrier concentration

〇Yohei Sato¹, Kiyomasa Doi¹, Yoshinori Onose¹, Kazunori Ueno¹ (1.Univ. Tokyo)

4:00 PM - 4:15 PM

△ [13p-2H-10] Sr composition dependence of electrical transport properties of Sr_xBa_1-xPbO₃ thin films

〇Tomoki Miyakawa¹, Junichi Shiogai¹, Atsushi Tsukazaki^1,2 (1.IMR, Tohoku Univ., 2.JST-PRESTO)

4:15 PM - 4:30 PM

△ [13p-2H-11] The improvement of electron mobility in La:BaSnO₃ thin films by the insertion of atomically-flat insulating (Sr,Ba)SnO₃ buffer layer

〇(M2)KAZUKI NISHIHARA¹, JUNICHI SHIOGAI¹, ATSUSHI TSUKAZAKI^1,2 (1.IMR, Tohoku Univ., 2.PRESTO, JST)

Break （4:30 PM - 4:45 PM）

4:45 PM - 5:00 PM

△ [13p-2H-12] Solid-state Lithium battery using Li(Ni_0.5Mn_1.5)O₄ epitaxial films

〇Hideyuki Kawasoko¹, Susumu Shiraki¹, Toru Suzuki¹, Ryota Simizu¹, Tetsuo Shirasawa², Taro Hitosugi¹ (1.Tohoku Univ. WPI-AIMR, 2.Univ. of Tokyo ISSP)

5:00 PM - 5:15 PM

△ [13p-2H-13] Nonvolatile Voltage Memory Developed with Solid Oxide Li Ion Electrolyte

〇Issei Sugiyama¹, Tohru Suzuki¹, Ryota Shimizu¹, Susumu Shiraki¹, Taro Hitosugi¹ (1.Tohoku Univ.)

5:15 PM - 5:30 PM

△ [13p-2H-14] Ion-gate Induced Phase Changes and Their Spatial Distribution in WO₃ Thin films

〇SHINICHI NISHIHAYA¹, MASAKI UCHIDA¹, YUSUKE KOZUKA¹, YOSHIHIRO IWASA^1,2, MASASHI KAWASAKI^1,2 (1.the Univ. of Tokyo, 2.CEMS, RIKEN)

5:30 PM - 5:45 PM

△ [13p-2H-15] Phase transition behavior of BaTiO₃ film grown on orthorhombic GdScO₃substrate

〇Shunsuke Kobayashi¹, Takeharu Kato¹, Tsukasa Hirayama¹, Yuichi Ikuhara^1,2, Takahisa Yamamoto^1,3 (1.JFCC, 2.Univ. Tokyo, 3.Nagoya Univ.)

5:45 PM - 6:00 PM

△ [13p-2H-16] Effect of lattice strain for metal-to-insulator transitions in perovskite titanates

〇(M1)Hirokazu Okabe¹, Kohei Yoshimatsu¹, Takayoshi Oshima¹, Akira Ohtomo^1,2 (1.Tokyo Tech., 2.MCES)

6:00 PM - 6:15 PM

△ [13p-2H-17] Observation of the Spin Structure Change in Multiferroic BiFe_1-xCo_xO₃ Thin Films

〇Ryo Kawabe¹, Hajime Hojo¹, Hajime Yamamoto¹, Keisuke Shimizu¹, Ko Mibu², Masaki Azuma¹ (1.Tokyo Tech., 2.Nagoya Tech.)

6:15 PM - 6:30 PM

△ [13p-2H-18] Electric field-effect and metal insulator transition of strongly correlated oxides SrVO₃ films

〇(M2)Keisuke Otomo¹, Shunsuke Kouno¹, Yohei Sato¹, Kazunori Ueno¹ (1.Dept. Basic Science, Univ. Tokyo)

6:30 PM - 6:45 PM

[13p-2H-19] Superconductivity of Magnéli phase Ti oxide films

〇Kouhei Yoshimatsu¹, Osami Sakata^2,3, Akira Ohtomo^1,3 (1.Tokyo Tech., 2.NIMS, 3.MCES)

6:45 PM - 7:00 PM

△ [13p-2H-20] Superconductivity of γ-Ti₃O₅ films

〇Kouhei Yoshimatsu¹, Osami Sakata^2,3, Akira Ohtomo^1,3 (1.Tokyo Tech., 2.NIMS, 3.MCES)

7:00 PM - 7:15 PM

△ [13p-2H-21] Epitaxial growth of Ti₂O₃ films and their anisotropy conductivity

〇(M1)Hikaru Kurokawa¹, Kohei Yoshimatsu¹, Takayoshi Oshima¹, Akira Ohtomo^1,2 (1.Tokyo Tech., 2.Materials Research Center for element Strategy)

Oral presentation

[14a-2H-1~11] 6.3 Oxide electronics

Mon. Sep 14, 2015 9:00 AM - 11:45 AM 2H (222)

座長:近松彰(東大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[14a-2H-1] Control of Interfacial Properties and its Application Based on Solid State Ionics

〇Kazuya Terabe¹, Takashi Tsuchiya^1,2, Masakazu Aono¹ (1.NIMS, 2.Tokyo Univ. Sci.)

9:15 AM - 9:30 AM

[14a-2H-2] Ion conductivity across Li₃PO₄/LiCoO₂ interfaces fabricated using PLD

〇Susumu Shiraki¹, Tohru Suzuki¹, Hideyuki Kawasoko¹, Ryota Shimizu¹, Taro Hitosugi¹ (1.AIMR, Tohoku Univ.)

9:30 AM - 9:45 AM

[14a-2H-3] Lattice-constant-size dependence of Li⁺/Na⁺ diffusion in Prussian blue analogues

〇Masamitsu TAKACHI¹, Yuya Fukuzumi¹, Yutaka Moritomo^1,2,3 (1.Graduate School of Pure & Applied Science, 2.Faculty of Pure & Applied Science, 3.Center for Integrated Reseacrh in Fundamental Science and Engineering)

9:45 AM - 10:00 AM

[14a-2H-4] EXAFS Analysis of Layered Oxides as Sodium Ion Secondary Battery Cathode Material

〇(M1)Shota Akama¹, Takayuki Shibata², Masamitsu Takachi¹, Wataru Kobayashi^1,2, Yutaka Moritomo^1,2,3 (1.Grad. Sch. Pure and Appl. Sci., Univ. Tsukuba, 2.Fac. Pure and Appl. Sci., Univ. Tsukuba, 3.CiRfSE)

10:00 AM - 10:15 AM

[14a-2H-5] Correlation between ion diffusion and crystal structure in titanium oxide

〇Yuya Fukuzumi¹, Wataru Kobayashi^1,2, Yutaka Moritomo^1,2,3 (1.Grad. Sch. Pure and Appl. Sci., Univ. Tsukuba, 2.Fac. Pure and Appl. Sci., Univ. Tsukuba, 3.CiRfSE, Univ. Tsukuba)

10:15 AM - 10:30 AM

[14a-2H-6] Oxygen-reduction reaction catalytic activities of La_0.67Sr_0.33MnO₃ epitaxial thin films

〇Daisuke Kan¹, Yuuki Orikasa², Kiyofumi Nitta³, Hajime Tanida⁴, Takahiro Sasaki¹, Haichuan Guo¹, Yusuke Ozaki¹, Yoshiharu Uchimoto², Yuuichi Shimakawa^1,5 (1.ICR, Kyoto Univ., 2.GSHES, Kyoto Univ., 3.JASRI/SPring-8, 4.SACI, Kyoto Univ., 5.JST-CREST)

10:30 AM - 10:45 AM

[14a-2H-7] Hard X-Ray Photoemission Study of LaAlO₃/(Nb:)SrTiO₃

〇Tomofumi Susaki^1,2, Shigenori Ueda³, Kosuke Matsuzaki^1,2, Toshihiro Kobayashi¹, Yoshitake Toda², Hideo Hosono^1,2 (1.MSL, Tokyo Tech, 2.MCES, Tokyo Tech, 3.NIMS)

10:45 AM - 11:00 AM

[14a-2H-8] Electronic states of termination-layer-controlled LaFeO₃/Nb:SrTiO₃ heterointerfaces

〇Makoto Minohara¹, Miho Kitamura¹, Taichi Mitsuhashi², Masaki Kobayashi¹, Koji Horiba¹, Hiroshi Kumigashira^1,2 (1.KEK-PF, 2.Tohoku Univ.)

11:00 AM - 11:15 AM

[14a-2H-9] Interface induced spontaneous polarization in an oxide heterojunction

〇Masao Nakamura¹, Fumitaka Kagawa¹, Toshiaki Tanigaki¹, Hyun Soon Park¹, Tsuyoshi Matsuda², Daisuke Shindo^1,3, Yoshinori Tokura^1,4, Masashi Kawasaki^1,4 (1.RIKEN-CEMS, 2.JST, 3.Tohoku Univ., 4.Univ. of Tokyo)

11:15 AM - 11:30 AM

[14a-2H-10] Superconducting Temperature Modulation Achieved by All-Solid-State Electric-Double-Layer Transistor

〇Takashi Tsuchiya¹, Satoshi Moriyama¹, Kazuya Terabe¹, Masakazu Aono¹ (1.NIMS)

11:30 AM - 11:45 AM

[14a-2H-11] Redox reaction induced by field effect in SrFeO_x thin films

〇Akihiro Abe¹, Hatano Takafumi¹, Suvankar Chakraverty², Ikuta Hiroshi¹, Iwasa Yoshihiro^2,3, Tokura Yoshinori^2,3 (1.Nagoya Univ., 2.RIKEN, 3.Tokyo Univ.)

Oral presentation

[14p-2H-1~15] 6.3 Oxide electronics

Mon. Sep 14, 2015 1:45 PM - 5:45 PM 2H (222)

座長:吉松公平(東工大),打田正輝(東大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:00 PM

[14p-2H-1] [Young Scientist Presentation Award Speech] Anomalous and Topological Hall Effects in Eu_1-xLa_xTiO₃ films of Diluted Carrier

〇Tomoki Murata¹, Kei Takahashi², Masaki Uchida¹, Yusuke Kozuka¹, Yoshinori Tokura^1,2, Masashi Kawasaki^1,2 (1.Univ. of Tokyo, 2.RIKEN CEMS)

2:00 PM - 2:15 PM

[14p-2H-2] Interface-driven topological Hall effect in SrIrO₃-SrRuO₃ bilayer

〇Jobu Matsuno¹, Naoki Ogawa¹, Masashi Kawasaki^1,2, Yoshinori Tokura^1,2 (1.RIKEN CEMS, 2.Univ. of Tokyo)

2:15 PM - 2:30 PM

[14p-2H-3] Lattice Distortion Effect on Magnetic Domain Formation in Pyrochlore Iridate Films

〇(D)Takahiro Fujita¹, Shohei Ogawa¹, Masaki Uchida¹, Yusuke Kozuka¹, Masashi Kawasaki^1,2 (1.the Univ. of Tokyo, 2.CEMS, RIKEN)

2:30 PM - 2:45 PM

[14p-2H-4] Formation of Si:α-Fe₂O₃ Thin Films by Two-step Pulsed Laser Deposition and Control of Their Elctrical and Magnetic Properties

〇Munetoshi Seki¹, Takeshi Ishida¹, Hidekazu Nasu¹, Ameya Sathe¹, Tetsuya Murata¹, Shunsuke Kawabe¹, Hiroyasu Yamahara¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

2:45 PM - 3:00 PM

[14p-2H-5] Electrical- and magneto-conductive properties in Fe₃O₄thin films on thermally oxidized Si substrates produced by rapid thermal deoxidation method

〇Akihisa Fujita¹, Hiromi Kobori¹, Atsushi Yamasaki¹, Toshifumi Taniguchi², Tetsuo Shimizu³ (1.Konan Univ, 2.Osaka Univ, 3.AIST)

3:00 PM - 3:15 PM

[14p-2H-6] Spin-glass behaviors of LuFe_5-2xCo_xSi_xO₁₂garnet thin films

〇Hiroyasu Yamahara¹, Hidekazu Nasu¹, Tetsuya Murata¹, Masaki Adachi¹, Munetoshi Seki¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

3:15 PM - 3:30 PM

[14p-2H-7] Lattice strain effect and magnetic properties of Nd₃Fe₅O₁₂garnet thin films

〇Hidekazu Nasu¹, Masaki Adachi¹, Hiroyasu Yamahara¹, Munetoshi Seki¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

3:30 PM - 3:45 PM

[14p-2H-8] First-principle calculation on the doping site and its relation to the metallic conductivity in H-doped SrFeO₂ system

〇Yuji Kurauchi¹, Hideyuki Kamisaka^1,2, Tsukasa Katayama¹, Akira Chikamatsu^1,2, Tetsuya Hasegawa^1,2,3 (1.Tokyo Univ., 2.JST-CREST, 3.KAST)

Break （3:45 PM - 4:00 PM）

4:00 PM - 4:15 PM

[14p-2H-9] Kinetics of spinodal decomposition in the TiO₂-VO₂system
The effect of aliovalent (Al³⁺,Nb⁵⁺) doping

〇makoto ogata¹, Yuji Muraoka¹, Takayoshi Yokoya¹ (1.Okayama Univ.)

4:15 PM - 4:30 PM

[14p-2H-10] Phase transition properties and c/a ratio in pulsed laser-deposited V₂O₃ thin films

〇Joe Sakai¹, Patrice Limelette¹, Hiroshi Funakubo² (1.GREMAN, Univ. Tours, 2.Tokyo Tech)

4:30 PM - 4:45 PM

[14p-2H-11] Electric field-induced transport modulation in VO₂ nano-wire channels using a planer-type gate

〇(M1)Masashi Chikanari¹, Teruo Kanki¹, Hidekazu Tanaka¹ (1.ISIR, Osaka Univ.)

4:45 PM - 5:00 PM

▲ [14p-2H-12] Electric-field induced transport modulation in VO₂ FETs with organic parylene-C/high-k oxide hybrid gate dielectric

〇TINGTING WEI^1,2, Teruo Kanki¹, Kohei Fujiwara³, Hidekazu Tanaka¹ (1.Osaka Univ., 2.Kunming Sci Tech Univ., 3.Tohoku Univ.)

5:00 PM - 5:15 PM

[14p-2H-13] Time Response of VO₂ Channel Transistors to Gate Voltage Application

〇Takeaki Yajima^1,2, Tomonori Nishimura^1,2, Akira Toriumi^1,2 (1.The Univ. of Tokyo, 2.JST-CREST)

5:15 PM - 5:30 PM

[14p-2H-14] A-site driven ferroelectric ferromagnet: strained La₂NiMnO₆

〇Ryota Takahashi¹, Isao Ohkubo^1,2, Kunihiko Yamauchi³, Miho Kitamura¹, Yasunari Sakurai¹, Masaharu Oshima¹, Tamio Oguchi^3,4, Yasuo Cho⁵, Mikk Lippmaa¹ (1.Univ. Tokyo, 2.NIMS, 3.Osaka Univ., 4.JST-CREST, 5.Tohoku Univ.)

5:30 PM - 5:45 PM

[14p-2H-15] Fabrication and electronic states analysis of ordered SrRu_0.5Cr_0.5O₃ epitaxial thin films

〇keisuke yamada¹, Akira Chikamatsu^1,2, Kei Shigematsu^2,3, Makoto Minohara⁴, Hiroshi Kumigashira⁴, Tetsuya Hasegawa^1,2,3 (1.Univ. of Tokyo, 2.JST-CREST, 3.KAST, 4.KEK-IMSS)

Poster presentation

[14p-PA13-1~21] 6.3 Oxide electronics

Mon. Sep 14, 2015 6:30 PM - 8:30 PM PA13 (Event Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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6:30 PM - 8:30 PM

[14p-PA13-1] Substrate effect on Fe₃O₄ dewetting

〇Daiki Shono¹, Ryota Takahashi¹, Aomi Onuma², Shingo Maruyama², Yuji Matsumoto², Solmaz Jahangir³, Valanoor Nagarajan³ (1.ISSP, Univ. Tokyo, 2.Univ. Tohoku, 3.UNSW)

6:30 PM - 8:30 PM

[14p-PA13-2] Structure and physical properties of NdNi(O,F)₃ thin films prepared via low-temperature topotactic synthesis

〇Tomoya Onozuka¹, Akira Chikamatsu^1,2, Tsukasa Katayama¹, Tomoteru Fukumura^2,3, Tetsuya Hasegawa^1,2,4 (1.Univ. of Tokyo, 2.JST-CREST, 3.Tohoku Univ., 4.KAST)

6:30 PM - 8:30 PM

[14p-PA13-3] Domain structure and growth behavior in SrMnO_2.5 oxide films

〇Shunsuke Kobayashi¹, Yuichi Ikuhara^1,2, Takahisa Yamamoto^1,3 (1.JFCC, 2.Univ. Tokyo, 3.Nagoya Univ.)

6:30 PM - 8:30 PM

[14p-PA13-4] Effect of Doping on Electrical and Magnetic Properties of Highly-Crystalline α-Fe₂O₃
Thin Films

〇MASASHI UCHIDA¹, KAZUAKI AKAIWA¹, SACHIO KOMORI¹, ITSUHIRO KAKEYA¹, KENTARO KANEKO¹, SHIZUO FUJITA¹ (1.Kyoto Univ.)

6:30 PM - 8:30 PM

[14p-PA13-5] Metallic electric conduction in Sr₂MgMoO_6−δ / KTaO₃ (100) system

〇Kei Shigematsu^1,2, Shoichiro Nakao^1,2, Akira Chikamatsu^2,3, Yasushi Hirose^1,2,3, Hasegawa Tetsuya^1,2,3 (1.KAST, 2.JST-CREST, 3.The Univ. of Tokyo)

6:30 PM - 8:30 PM

[14p-PA13-6] Homoepitaxial growth of SrTiO₃ thin films by pulsed laser deposition using fourth harmonic Nd:YAG pulsed laser

〇Akinobu Yokota¹, Takumi Fujiwara¹, Motonori Nakamura¹, Ken'ichi Yoshimoto¹, Koji Takamura¹ (1.NIT, Asahikawa College)

6:30 PM - 8:30 PM

[14p-PA13-7] Parametric dependence of the self-oscillation phenomenon in VO₂/Ti/Si point contact layered device

〇(D)Suruz Md¹, Kunio Okimura¹, Joe Sakai² (1.Tokai Univ., 2.GREMAN, Univ. Tours)

6:30 PM - 8:30 PM

[14p-PA13-8] Growth and the transition properties of large crystalline domain VO₂ films on Al₂O₃ (001) substrate by biased sputtering

〇(D)BintiAzhan NurulHanis¹, Kunio Okimura¹, Mustapha Zaghrioui², Joe Sakai² (1.Tokai Univ., 2.GREMAN, Univ. Tours)

6:30 PM - 8:30 PM

[14p-PA13-9] Electrical and Structural Properties of VO₂ Thin Film with Mixed Valence State

Takaaki Suetsugu¹, 〇Tohru Higuchi¹, Tsuchiya Takashi¹, Masaki Kobayashi², Hiroshi Kumigashira² (1.Tokyo Univ. Sci., 2.PF, KEK)

6:30 PM - 8:30 PM

[14p-PA13-10] Electrical and Structural Properties of TiO_2-δ Thin Film Prepared by Sputtering Using Oxygen Radical

Kinya Kawamura¹, Naoya Suzuki¹, Takashi Tsuchiya¹, Masaki Kobayashi², Hiroshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. of Sci., 2.KEK)

6:30 PM - 8:30 PM

[14p-PA13-11] The influence of absorbed water on basic memory characteristics of resistive random access memory

〇Koki Kawano¹, Kohei Kimura¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (1.Tottori Univ., 2.TiFREC)

6:30 PM - 8:30 PM

[14p-PA13-12] Preparation of NiO Thin Film deposited by Sol-Gel method

〇RIKI FUJITA¹, RYOUGO KUMAO¹, HIROTO OOMAE¹ (1.NIT, Kushiro College)

6:30 PM - 8:30 PM

[14p-PA13-13] Fabrication of NiO:Li thin films for transparent solar cells

〇kazuya satou¹, sangcheol kim¹, shuji komuro², xinwei zhao¹ (1.tokyo univ.of sci, 2.toyo univ.)

6:30 PM - 8:30 PM

[14p-PA13-14] Fabrication of Cu-doped NiO thin films for transparent solar cells

〇SangCheol Kim¹, Kazuya Sato¹, Shuji Komuro², Xinwei Zhao¹ (1.tokyo univ of sci., 2.toyo univ.)

6:30 PM - 8:30 PM

[14p-PA13-15] Preparation of CuYO₂ by sol-gel process and crystallinity dependence on preparation condition

〇Takashi Ehara^1,2, Marina Abe¹, Takayoshi Nakanishi¹, Kohei Sasaki¹ (1.Ishinomaki Senshu Univ., 2..)

6:30 PM - 8:30 PM

[14p-PA13-16] Fabrication of Molybdenum trioxide thin films by spin-coating method and evaluation of annealing temperature dependence

〇Yuto Kakinoki¹, Akira Emoto¹, Naoki Ohtani¹ (1.Doshisha Univ.)

6:30 PM - 8:30 PM

[14p-PA13-17] Microstructural Analysis of Nb doped TiO₂ Transparent Conductive Film by Transmission Electron Microscope

〇Daisuke Ogawa¹, Shoichiro Nakao^2,3, Kazuo Morikawa¹, Yasushi Hirose^2,3,4, Tetsuya Hasegawa^2,3,4 (1.TIRI, 2.KAST, 3.CREST, 4.Univ. of Tokyo)

6:30 PM - 8:30 PM

[14p-PA13-18] Crystal and Electronic Structure of Mo and N co-doped Anatase TiO₂

〇(M2)Taku Higuchi¹, Kouki Inoue¹, Masato Emori¹, Tomoaki Nakabe¹, Hiroshi Sakama¹ (1.Sophia Univ)

6:30 PM - 8:30 PM

[14p-PA13-19] Electrochemical formation and optical characterization of Cu₂O/GaN heterostructures

〇Yusuke Kumazaki¹, Sayaka Ohmi¹, Zenji Yatabe¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.)

6:30 PM - 8:30 PM

[14p-PA13-20] Electrochemically doposited p-Cu₂O/n-oxide heterojunction solar cells and their application to photorechargeable battery

〇(M2)daiki maeda¹, Teruaki Nomiyama¹, Yuji Horie¹ (1.Kagoshima Univ.)

6:30 PM - 8:30 PM

[14p-PA13-21] Charge/discharge characteristics of a rocking-chair type photorechargeable cell

〇(M1)Ryoichi Arima¹, Teruaki Nomiyama¹, Yuji Horie¹ (1.Kagoshima univ.)

Oral presentation

[15a-2H-1~10] 6.3 Oxide electronics

Tue. Sep 15, 2015 9:30 AM - 12:00 PM 2H (222)

座長:中村芳明(阪大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[15a-2H-1] Preparation and Characterization of RF Sputtered BaTiO₃ Thin Films for ReRAM

〇Shuhei Hashimoto¹, Toshiyuki Sugie¹, Ziyang Zhang¹, Kaoru Yamashita¹, Minoru Noda¹ (1.Kyoto Inst. Tech)

9:45 AM - 10:00 AM

[15a-2H-2] Magnetic-Field-Assisted Anodization of Alminium

〇(M1C)Yusuke Hisajima¹, Yoshitaka Morishita¹ (1.Tokyo Univ. of Agri & Tech)

10:00 AM - 10:15 AM

[15a-2H-3] Resistive Switching Properties of Ni/SiO_x/Ti Nanodots/SiO_x/Ni Diodes

〇Yusuke Kato¹, Takashi Arai¹, Akio Ohta¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

10:15 AM - 10:30 AM

[15a-2H-4] Effect of ultraviolet light irradiation on resistance random access memory

〇Kouhei Kimura¹, Satoru Kishida^1,2,3, Koutoku Ohmi^1,3, Kentaro Kinoshita^1,2,3 (1.Tottori Univ., 2.TiFREC, 3.TEDREC)

10:30 AM - 10:45 AM

[15a-2H-5] The Shape Analysis of ReRAM Filament by Temperature Characteristics Measurement

〇(D)Takumi Moriyama^1,2, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (1.Tottori Univ., 2.TiFREC)

10:45 AM - 11:00 AM

[15a-2H-6] Elucidation of resistive switching mechanism in perovskite oxides

〇Toshiki Shiomi¹, Yuuto Hagihara¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (1.Tottori Univ., 2.TiFREC)

11:00 AM - 11:15 AM

[15a-2H-7] Impacts of metal electrode on the defect structure and resistive switching characteristics of amorphous SrTiO₃

〇Atsushi Tsurumaki-Fukuchi¹, Ryosuke Nakagawa¹, Reon Katsumura¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Hokkaido Univ.)

11:15 AM - 11:30 AM

[15a-2H-8] Direct observation of filament growth by using planar-type conducting-bridge memory

〇Tomohiro Aoki¹, Yusuke Sawai¹, Atsushi Fukushima¹, Akinori Harada¹, Toshiyuki Itoh¹, Hitoshi Osawa³, Toshiaki Ina³, Motohiro Suzuki³, Naomi Kawamura³, Masaichiro Mizumaki³, Tomoya Uruga³, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (1.Tottori Univ., 2.TiFREC, 3.JASRI/SPring-8)

11:30 AM - 11:45 AM

[15a-2H-9] In-situ TEM observation of a planar-type ReRAM with Cu nanogap structures

〇Ryota Yonesaka¹, Yosuke Murakami¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Graduate School of IST, Hokkaido Univ.)

11:45 AM - 12:00 PM

[15a-2H-10] Observation of structural changes of Cu/WO_x ReRAMs during resistive switching cycles by in-situ TEM

〇Akihito Takahashi¹, Yuuki Ohno¹, Masaki Kudo¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.IST, Hokkaido Univ.)

Oral presentation

[16a-2H-1~13] 6.3 Oxide electronics

Wed. Sep 16, 2015 9:00 AM - 12:15 PM 2H (222)

座長:関宗俊(東大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

[16a-2H-1] Change of Properties in IZO/Ag/IZO Multilayer in a High Humidity Condition

〇Sho Kawamori¹, Midori Kawamura¹, Yoshio Abe¹, Takayuki Kiba¹, Kyung Ho Kim¹ (1.Kitami Inst. Tech.)

9:15 AM - 9:30 AM

[16a-2H-2] Fabrication of AlO_x thin films by photochemical deposition

〇Shunta Sato¹, Masaya Ichimura¹ (1.NIT)

9:30 AM - 9:45 AM

[16a-2H-3] Electrochromic properties of MBE grown WO3 films

〇Masayuki Matsuo¹, Takayuki Murayama¹, Yoshiyuki Harada¹, Kazuto Koike¹, Shigehiko Sasa¹, Mitsuaki Yano¹, Katsuhiko Inaba², Shintaro Kobayashi² (1.Osaka Inst. of Tech., NMRC, 2.Rigaku Corp., X-Ray Res. Lab.)

9:45 AM - 10:00 AM

[16a-2H-4] Epitaxial growth of Li₃Ni₂NbO₆ nano-tablet structures

〇Hideyuki Kawasoko¹, Yoshitaka Takagi¹, Kuniko Yamamoto¹, Ryota Shimzu¹, Issei Sugiyama¹, Susumu Shiraki¹, Taro Hitosugi¹ (1.Tohoku Univ. WPI-AIMR)

10:00 AM - 10:15 AM

[16a-2H-5] Characterization of TiO₂ Nanorod and Nanotube Electrodes for Quantum Dots Solar Cell Applications

〇(M1)satoshi kaji¹, Jin Chang^1,3, Taro Toyoda^1,3, Yuhei Ogomi^2,3, Shuzi Hayase^2,3, Qing Shen^1,3 (1.Univ. Electro-Commun., 2.Kyushu Inst. Tech., 3.JST CREST)

10:15 AM - 10:30 AM

[16a-2H-6] Photovoltaic Properties of Inverse Opal TiO₂ Electrode Adsorbed with CdSe Quantum Dots: the effect of TiCl₄ post treatment

〇(M1)motoki hironaka¹, Jin Chang^1,3, Taro Toyoda^1,3, Hori Kanae¹, Yuhei Ogomi^2,3, Shuzi Hayase^2,3, Qing Shen^1,3 (1.Univ. of Electro-Commun., 2.Kyushu Inst. Tec., 3.JST CREST)

10:30 AM - 10:45 AM

[16a-2H-7] Solar cells fabricated using Cu₂O thin films grown epitaxially on polycrystalline Cu₂O:Na sheets

〇Yuki Nishi¹, Toshihiro Miyata¹, Tadatsugu Minami¹ (1.OEDS R&D Center, K I T)

10:45 AM - 11:00 AM

[16a-2H-8] Photovoltaic properties of n-type multi-component oxides/Cu₂O heterojunction solar cells fabricated using Cu₂O:Na Sheet

〇Yuki Nishi¹, Toshihiro Miyata¹, Tadatsugu Minami¹ (1.OEDS R&D Center, K I T)

11:00 AM - 11:15 AM

▲ [16a-2H-9] Annealing effects of the sulfur treated n-type and p-type cuprous oxide

〇(D)KMD Jayathilaka^1,2, Loku S. R. Kumara³, Shinji Kohara³, Osami Sakata³, Vassilios Kapaklis⁴, Withana Siripala², Jayanetti K. D. S. Jayanetti1¹ (1.Univ. of Colombo, 2.Univ. of Kelaniya, 3.NIMS/SPring-8, 4.Uppsala Univ.)

11:15 AM - 11:30 AM

[16a-2H-10] Growth of gallium oxide layers by low temperature MOCVD for n-type buffer layer of solar cells

〇Yuki Takiguchi¹, Shinsuke Miyajima¹ (1.Tokyo Tech.)

11:30 AM - 11:45 AM

[16a-2H-11] Electronic structures of two types of TiO₂ electrodes: inverse opal and nanoparticulate cases

〇Taro Toyoda^1,4, Witoon Yindeesuk¹, Tsuyoshi Okuno¹, Masaya Akimoto¹, Keita Kamiyama², Shuzi Hayase^3,4, Qing Shen^1,4 (1.Univ.Electro-Commun., 2.Bunkoukeiki, 3.Kyushu Inst. Tech., 4.CREST)

11:45 AM - 12:00 PM

[16a-2H-12] Development of ZnO-based photocatalyst having perovskite structure

〇(M1)ryo sasaki¹, takuya suzuki¹ (1.Kitakyu Univ.)

12:00 PM - 12:15 PM

[16a-2H-13] Characterization and Photocatalytic Activities of SrTi_1−XCo_XO₃ Thin Films Prepared by Liquid State Pulsed Laser Ablation.

〇Fumihiko Ichihara¹, Murata Yuma¹, Ono Hiroshi¹, Cheow-keong Choo², Tanaka Katsumi¹ (1.Department of Engineering Science, UEC, 2.Center for International Programs and Exchange, UEC)

Sessions

6 Thin Films and Surfaces » 6.3 Oxide electronics

[13p-2H-1~21] 6.3 Oxide electronics

△ [13p-2H-1] Electro-deposition and characterization of Cu2O/InP heterostructure

△ [13p-2H-2] Atomic resolution imaging of LaAlO3(100) using non-contact atomic force microscopy

△ [13p-2H-3] Strong electron localization at the sub-surface Ti site on a rutile TiO2(110) surface

△ [13p-2H-4] Resistive Switching Properties and Crystal Structural Change of Rutile TiO2

△ [13p-2H-5] Resistive switching characteristics in TiO2-based ReRAM cells with Pt or Ag top electrode

△ [13p-2H-7] Dependence of the resistive switching properties on the growth temperature in high density epitaxial Fe3O4-δ nanodots.

△ [13p-2H-8] Topological Hall effect in BaBiO3/SrRuO3 heterostructures

△ [13p-2H-9] Specific Hall effect at a SrTiO3 interface in low carrier concentration

△ [13p-2H-10] Sr composition dependence of electrical transport properties of SrxBa1-xPbO3 thin films

△ [13p-2H-11] The improvement of electron mobility in La:BaSnO3 thin films by the insertion of atomically-flat insulating (Sr,Ba)SnO3 buffer layer

△ [13p-2H-12] Solid-state Lithium battery using Li(Ni0.5Mn1.5)O4 epitaxial films

△ [13p-2H-13] Nonvolatile Voltage Memory Developed with Solid Oxide Li Ion Electrolyte

△ [13p-2H-14] Ion-gate Induced Phase Changes and Their Spatial Distribution in WO3 Thin films

△ [13p-2H-15] Phase transition behavior of BaTiO3 film grown on orthorhombic GdScO3 substrate

△ [13p-2H-16] Effect of lattice strain for metal-to-insulator transitions in perovskite titanates

△ [13p-2H-17] Observation of the Spin Structure Change in Multiferroic BiFe1-xCoxO3 Thin Films

△ [13p-2H-18] Electric field-effect and metal insulator transition of strongly correlated oxides SrVO3 films

△ [13p-2H-20] Superconductivity of γ-Ti3O5 films

△ [13p-2H-21] Epitaxial growth of Ti2O3 films and their anisotropy conductivity

[14a-2H-1~11] 6.3 Oxide electronics

[14p-2H-1~15] 6.3 Oxide electronics

▲ [14p-2H-12] Electric-field induced transport modulation in VO2 FETs with organic parylene-C/high-k oxide hybrid gate dielectric

[14p-PA13-1~21] 6.3 Oxide electronics

[15a-2H-1~10] 6.3 Oxide electronics

[16a-2H-1~13] 6.3 Oxide electronics

▲ [16a-2H-9] Annealing effects of the sulfur treated n-type and p-type cuprous oxide

Authentication

△ [13p-2H-1] Electro-deposition and characterization of Cu₂O/InP heterostructure

△ [13p-2H-2] Atomic resolution imaging of LaAlO₃(100) using non-contact atomic force microscopy

△ [13p-2H-3] Strong electron localization at the sub-surface Ti site on a rutile TiO₂(110) surface

△ [13p-2H-4] Resistive Switching Properties and Crystal Structural Change of Rutile TiO₂

△ [13p-2H-5] Resistive switching characteristics in TiO₂-based ReRAM cells with Pt or Ag top electrode

△ [13p-2H-7] Dependence of the resistive switching properties on the growth temperature in high density epitaxial Fe₃O_4-δ nanodots.

△ [13p-2H-8] Topological Hall effect in BaBiO₃/SrRuO₃ heterostructures

△ [13p-2H-9] Specific Hall effect at a SrTiO₃ interface in low carrier concentration

△ [13p-2H-10] Sr composition dependence of electrical transport properties of Sr_xBa_1-xPbO₃ thin films

△ [13p-2H-11] The improvement of electron mobility in La:BaSnO₃ thin films by the insertion of atomically-flat insulating (Sr,Ba)SnO₃ buffer layer

△ [13p-2H-12] Solid-state Lithium battery using Li(Ni_0.5Mn_1.5)O₄ epitaxial films

△ [13p-2H-14] Ion-gate Induced Phase Changes and Their Spatial Distribution in WO₃ Thin films

△ [13p-2H-15] Phase transition behavior of BaTiO₃ film grown on orthorhombic GdScO₃substrate

△ [13p-2H-17] Observation of the Spin Structure Change in Multiferroic BiFe_1-xCo_xO₃ Thin Films

△ [13p-2H-18] Electric field-effect and metal insulator transition of strongly correlated oxides SrVO₃ films

△ [13p-2H-20] Superconductivity of γ-Ti₃O₅ films

△ [13p-2H-21] Epitaxial growth of Ti₂O₃ films and their anisotropy conductivity

▲ [14p-2H-12] Electric-field induced transport modulation in VO₂ FETs with organic parylene-C/high-k oxide hybrid gate dielectric