[14p-2H-1~15] 6.3 Oxide electronics

[14p-2H-13] Time Response of VO₂ Channel Transistors to Gate Voltage Application

〇Takeaki Yajima^1,2, Tomonori Nishimura^1,2, Akira Toriumi^1,2 (1.The Univ. of Tokyo, 2.JST-CREST)

Keywords:Mott transition,Mott transistor

Time response of VO₂ channel transistors to gate voltage application was studied in detail. The response time of the VO₂ metal-insulator transition was orders of magnitude smaller than that of light-induced metal-insulator transition, which has a similar mechanism of transition. This descrepancy was attributed to the mechanism of carrier accumulation in the transistor channel.