The 76th JSAP Autumn Meeting, 2015

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Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[16a-2H-1~13] 6.3 Oxide electronics

Wed. Sep 16, 2015 9:00 AM - 12:15 PM 2H (222)

座長:関 宗俊(東大)

11:15 AM - 11:30 AM

[16a-2H-10] Growth of gallium oxide layers by low temperature MOCVD for n-type buffer layer of solar cells

〇Yuki Takiguchi1, Shinsuke Miyajima1 (1.Tokyo Tech.)

Keywords:solar cells,gallium oxide