The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[14a-2H-1~11] 6.3 Oxide electronics

Mon. Sep 14, 2015 9:00 AM - 11:45 AM 2H (222)

座長:近松 彰(東大)

11:00 AM - 11:15 AM

[14a-2H-9] Interface induced spontaneous polarization in an oxide heterojunction

〇Masao Nakamura1, Fumitaka Kagawa1, Toshiaki Tanigaki1, Hyun Soon Park1, Tsuyoshi Matsuda2, Daisuke Shindo1,3, Yoshinori Tokura1,4, Masashi Kawasaki1,4 (1.RIKEN-CEMS, 2.JST, 3.Tohoku Univ., 4.Univ. of Tokyo)

Keywords:Oxide heterojunction,Spontaneous polarization,Photovoltaics

We have investigated in detail the electronic structure of LaFeO3/SrTiO3 heterojunctions with the interfacial polar discontinuity. Photovoltaic measurements, electron holography, and piezoresponse force microscopy on the heterojunction indicate that a spontaneous polarization is induced in the originally non-polar LaFeO3. We conclude that the spontaneous polarization is triggered by the electronic reconstruction or so-called polar catastrophe which necessarily occurs to screen the bound charges originated from the polar discontinuity.