The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[14a-2H-1~11] 6.3 Oxide electronics

Mon. Sep 14, 2015 9:00 AM - 11:45 AM 2H (222)

座長:近松 彰(東大)

11:15 AM - 11:30 AM

[14a-2H-10] Superconducting Temperature Modulation Achieved by All-Solid-State Electric-Double-Layer Transistor

〇Takashi Tsuchiya1, Satoshi Moriyama1, Kazuya Terabe1, Masakazu Aono1 (1.NIMS)

Keywords:electric-double-layer transistor,solid state ionics,superconductivity

An all-solid-state electric-double-layer transistor was fabricated for electric modulation of the superconducting critical temperature. A shift of superconducting critical temperature was achieved by electrostatic carrier doping via electric-double-layer at superconductor/alkali metal ion conducting solid electrolyte interface. This solid electrolyte gating method should enable development of practical superconducting devices highly compatible with other electronic devices.