The 76th JSAP Autumn Meeting, 2015

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Poster presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[14p-PA13-1~21] 6.3 Oxide electronics

Mon. Sep 14, 2015 6:30 PM - 8:30 PM PA13 (Event Hall)

6:30 PM - 8:30 PM

[14p-PA13-11] The influence of absorbed water on basic memory characteristics of resistive random access memory

〇Koki Kawano1, Kohei Kimura1, Satoru Kishida1,2, Kentaro Kinoshita1,2 (1.Tottori Univ., 2.TiFREC)

Keywords:ReRAM,Oxide electronics