The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[14p-2H-1~15] 6.3 Oxide electronics

Mon. Sep 14, 2015 1:45 PM - 5:45 PM 2H (222)

座長:吉松 公平(東工大),打田 正輝(東大)

3:30 PM - 3:45 PM

[14p-2H-8] First-principle calculation on the doping site and its relation to the metallic conductivity in H-doped SrFeO2 system

〇Yuji Kurauchi1, Hideyuki Kamisaka1,2, Tsukasa Katayama1, Akira Chikamatsu1,2, Tetsuya Hasegawa1,2,3 (1.Tokyo Univ., 2.JST-CREST, 3.KAST)

Keywords:first-principle calculation,oxyhydride

According to a recent experimental report, hydrogenation of SrFeO2 causes insulator-to-metal transition. However its microscopic structure and the origin of carrier electron are still unknown. This compound has been synthesized only in thin-film forms via solid-state reaction, which makes the compound difficult to analyze experimentally. In this study, we report our theoretical investigation on H-doped SrFeO2 combining DFT-based first-principle method and thermodynamic analysis.