The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[14p-2H-1~15] 6.3 Oxide electronics

Mon. Sep 14, 2015 1:45 PM - 5:45 PM 2H (222)

座長:吉松 公平(東工大),打田 正輝(東大)

2:00 PM - 2:15 PM

[14p-2H-2] Interface-driven topological Hall effect in SrIrO3-SrRuO3 bilayer

〇Jobu Matsuno1, Naoki Ogawa1, Masashi Kawasaki1,2, Yoshinori Tokura1,2 (1.RIKEN CEMS, 2.Univ. of Tokyo)

Keywords:spin-orbit interaction,skyrmion,oxide interface

We have studied transport properties of bilayers consisting of m unit cells of SrRuO3 and 2 unit cells of SrIrO3. We observed an anomaly in the Hall resistivity, which can be attributed to topological Hall effect. The topological term rapidly decreases with m, ending up with a complete disappearance at m = 7. These results suggest that magnetic skyrmions of 10–20 nm are generated by Dzyaloshinskii-Moriya interaction, which might be caused by both broken inversion symmetry at the interface and strong spin-orbit coupling of SrIrO3.