Resistive Switching Properties of Ni/SiO<sub>x</sub>/Ti Nanodots/SiO<sub>x</sub>/Ni Diodes

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

Tue. Sep 15, 2015 9:30 AM - 12:00 PM 2H (222)

座長:中村芳明(阪大)

10:00 AM - 10:15 AM

〇Yusuke Kato¹, Takashi Arai¹, Akio Ohta¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

Keywords:resistive random access memory,Ti Nano-dots,Si-rich Oxide