Observation of structural changes of Cu/WO<sub>x</sub> ReRAMs during resistive switching cycles by <em>in-situ</em> TEM

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

Tue. Sep 15, 2015 9:30 AM - 12:00 PM 2H (222)

座長:中村芳明(阪大)

11:45 AM - 12:00 PM

〇Akihito Takahashi¹, Yuuki Ohno¹, Masaki Kudo¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.IST, Hokkaido Univ.)

Keywords:ReRAM,TEM