4:30 PM - 4:45 PM
[14p-2H-11] Electric field-induced transport modulation in VO2 nano-wire channels using a planer-type gate
Keywords:VO2,Mott FET,Metal-insulator transition
Oral presentation
6 Thin Films and Surfaces » 6.3 Oxide electronics
Mon. Sep 14, 2015 1:45 PM - 5:45 PM 2H (222)
座長:吉松 公平(東工大),打田 正輝(東大)
4:30 PM - 4:45 PM
Keywords:VO2,Mott FET,Metal-insulator transition