[14a-2J-1~12] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [14a-2J-1] Voltage-induced magnetic anisotropy change in Fe|MgO tunnel junctions investigated by x-ray absorption spectroscopy

〇(M2)Kensho Matsuda¹, Shinji Miwa¹, Kazuhito Tanaka¹, Yoshinori Kotani², Minori Goto¹, Tetsuya Nakamura², Norikazu Mizuochi¹, Yoshishige Suzuki¹ (1.Osaka Univ., 2.JASRI/SPring-8)

Keywords:voltage-induced anisotropy change,XAS