[14a-2J-1~12] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [14a-2J-5] Evaluation of write error rate for voltage-induced dynamic switching in perpendicularly magnetized magnetic tunnel juncitons

〇Yoichi Shiota¹, Takayuki Nozaki¹, Shingo Tamaru¹, Kay Yakushiji¹, Hitoshi Kubota¹, Akio Fukushima¹, Shinji Yuasa¹, Yoshishige Suzuki^1,2 (1.AIST Spintronics Research Center, 2.Osaka Univ.)

Keywords:voltage-induced dynamic switching