[14a-2J-1~12] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [14a-2J-6] Large voltage-induced magnetic anisotropy change in Cr/ultrathin Fe/MgO/Fe magnetic tunnel junctions

〇Takayuki Nozaki¹, Anna Koziol-Rachwal¹, Witold Skowronski^1,2, Zayets Vadym¹, Yoichi Shiota¹, Shingo Tamaru¹, Hitoshi Kubota¹, Akio Fukushima¹, Shinji Yuasa¹, Yoshishige Suzuki^1,3 (1.AIST, 2.AGH. Univ., 3.Osaka Univ.)

Keywords:Voltage control of magnetic anisotropy,Tunnel Magnetoresistance,Spintronics