[14a-2M-1~11] 13.10 Compound solar cells

[14a-2M-4] Defect Levels in GaAs p⁺n Diodes Embedded with InAs Quantum Dot Layers

〇Shinichiro Sato^1,2, Kenneth Schmieder², Seth Hubbard³, David Forbes³, Jeffery Warner², Takeshi Ohshima¹, Robert Walters³ (1.JAEA QuBS, 2.NRL, 3.RIT)

Keywords:III-V Quantum Dot,Solar Cells,DLTS

III-V quantum dot devices are expected to be applied to next generation solar cells with super high converstion efficieny. However, larger amount of defects are still included in QD devices compared to single crystal devices. In this study, deep level traps in GaAs pn-junction diodes with embedded 10 layers of InAs quantum dots (QDs), which are fabricated by Metal Organic Vapor Phase Deposition (MOVPE), are investigated using Deep Level Transient Spectroscopy (DLTS). The results are compared to GaAs pn-junction diodes without QD layer in order to identify the origin of the deep level traps.