[14a-2N-1~11] 3.15 Silicon photonics

[14a-2N-10] Enhancement of Ge lateral overgrowth over SiO₂ mask

〇(M2)Motoki Yako¹, Yasutaka Mizuno¹, Naoyuki Kawai¹, Kazumi Wada¹ (1.The Univ. of Tokyo)

Keywords:germanium,selective epitaxial growth

In Ge selective epitaxial growth (SEG), reveal the relationship between the width of SEG window and lateral overgrowth width on SiO₂. The relationship is explained by growth rate dependence on orientations. The relationship and thermal condition of (311) facet formation give suitable condition for lateral overgrowth by SEG.