[14a-2N-1~11] 3.15 Silicon photonics

[14a-2N-9] Butt-Joint Ge-PIN-PD for GE-PON Transceivers

〇Hideki Ono¹, Takasi Simoyama¹, Shigekazu Okumura¹, Masahiko Imai¹, Hiroki Yaegashi¹ (1.PETRA)

Keywords:waveguide Ge photodetector,butt-joint,p-i-n structure

We fabricated waveguide Ge photodetectors having a vertical or lateral p-i-n structure by Si photonics technology. Method of lightwave transition from Si waveguide to Ge absorber was changed to butt-joint from evanescent coupling for higher responsivity. As a result of evaluation for static characteristics of these Ge photodetectors, responsivity promising as a photodetector of GE-PON transceiver was obtained in lateral p-i-n structure.