[14a-2T-1~12] 17.1 Growth technology

[14a-2T-7] Growth of graphene on single-crystalline SiC cantilevers

〇MAKOTO TAKAMURA¹, Jun Suda², Hiroki Hibino^1,3, Hideki Yamamoto¹ (1.NTT Basic Res. Labs., 2.Kyoto Univ., 3.Kwansei Gakuin Univ.)

Keywords:graphene,SiC,strain