The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.1 Growth technology

[14a-2T-1~12] 17.1 Growth technology

Mon. Sep 14, 2015 9:00 AM - 12:15 PM 2T (232)

座長:佐藤 信太郎(富士通研)

11:15 AM - 11:30 AM

[14a-2T-9] Observation of growing process of graphene formed by laser-induced growth on step & terrace structure of SiC (0001)

〇(M2)Masakazu Hattori1, Hiroshi Ikenoue1, Daisuke Nakamura1, Tatsuo Okada1, Kazuaki Furukawa2, Makoto Takamura2, Hiroki Hibino2 (1.Kyushu Univ., 2.NTT Basic Res. Labs.)

Keywords:graphene,laser processing,SiC