The 76th JSAP Autumn Meeting, 2015

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals

[14a-2W-1~11] 15.3 III-V-group epitaxial crystals

Mon. Sep 14, 2015 9:15 AM - 12:15 PM 2W (234-2(North))

座長:間野 高明(物材機構)

10:15 AM - 10:30 AM

[14a-2W-5] Thermally induced crystallization of low-temperature-grown InxGa1-xAs

〇Yoriko Tominaga1, Yutaka Kadoya1, Hitoshi Morioka2, Osamu Ueda3 (1.AdSM, Hiroshima Univ., 2.Bruker AXS K.K., 3.Kanazawa Inst. Tech.)

Keywords:Low-temperature-grown GaAs-based semiconductors,Molecular beam epitaxy,Structural investigation