The 76th JSAP Autumn Meeting, 2015

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[14a-4C-1~10] 13.3 Insulator technology

Mon. Sep 14, 2015 9:00 AM - 11:45 AM 4C (432)

座長:渡部 平司(阪大),井上 真雄(ルネサス)

11:30 AM - 11:45 AM

△ [14a-4C-10] High-reliability SiO2 films formed on diamond by thermal oxidation of Si

〇Takeshi HARA1, Atsushi HIRAIWA1, Hiroshi KAWARADA1 (1.Waseda univ.)

Keywords:insulater,SiO2,diamond