[14a-4D-1~11] 13.7 Nano structures and quantum phenomena

[14a-4D-6] Nuclear-Spin Observation of Spatially Distributed Strains in GaAs Semiconductor

Masashi Nishimori¹, Hirokazu Hasegawa¹, 〇Susumu Sasaki¹, Shinji Watanabe², Yoshiro Hirayama^2,3 (1.Niigata Univ., 2.JST-ERATO, 3.Tohoku Univ.)

Keywords:lattice-mismatch-driven strains,GaAs,nuclear magnetic resonance

It is extremely vital to characterize how strains are distributed in semiconductors. For this purpose, nuclear spins can be a very powerful probe since they are the spins of “built-in” nuclei of the semiconductors. Here we report that, by developing the sensitivity of our custom-made spectrometer, we have succeeded in observing strains in the vertical direction to the interface through the Al nuclear spins that are embedded in neither the substrate nor the GaAs layer. In the talk, contrary to surface-sensitive techniques that detects the strain only around the interface, we clarify that our method detects how the strain caused by the interface due to the lattice mismatch is distributed as a whole in the vertical direction to the interface.