[14a-4D-1~11] 13.7 Nano structures and quantum phenomena

△ [14a-4D-7] Observation of spin relaxation in InGaAs/AlAsSb multiple quantum wells

〇tomoki ishikawa¹, gozu shin-ichiro², teruo mozume², masaki asakawa¹, ohki syunsuke¹, atsushi tackeuchi¹ (1.Waseda univ., 2.AIST)

Keywords:quantum wells,compound semiconductor,spin relaxation

We investigated the spin relaxation of InGaAs/AlAsSb multiple quantum wells with time-resolved spin-dependent pump-probe reflectance measurement. As a result, it appeared that positive temperature dependece of spin relaxation time at 30 K to 200 K and negative temperature dependece of spin relaxation time at 200 K to 300 K . It becomes clear that spin relaxation time inceases with well width increasing.