[14a-4D-1~11] 13.7 Nano structures and quantum phenomena

△ [14a-4D-8] Wide well width dependence of spin relaxation time of GaAs/AlGaAs tunneling bi-quantum-well

〇Yoshiki Nakamura¹, Takanori Aritake¹, Hao Wu¹, Canyu Jiang¹, Shunichi Muto², Atushi Tackeuchi¹ (1.Waseda Univ., 2.Hokkaido Univ.)

Keywords:tunneling bi-quantum-well,spin relaxation,resonant tunneling

We investigated wide well width dependence of spin relaxation time of GaAs/AlGaAs tunneling bi-quantum-well by time resolved pump and probe reflectance measurement. For 10.7 nm thick wide wells, the resonant tunneling occurs. We observed faster spin relaxation when the thickness of the wide well is 10.7 nm or more. This result is probably due to spin-flip tunnelung from the ground state of the narrow well to the first excited state of the wide well.