[14p-1B-1~9] Evaluation technology for oxide semiconductor

[14p-1B-2] Characterization of Metal Oxide Thin Films by Hard X-ray Photoelectron Spectroscopy (HAXPES)

〇Keisuke Kobayashi^1,2,3 (1.JAEA, 2.HiSOR, 3.KUT)

Keywords:Hard X-ray Photoelectron Spectroscopy(HAXPES),metal oxide thin films,ingapu states

Here, application of bulk sensiteive Hard X-ray Photoelectron Spectroscopy (HAXPES) to characterization of metal oxide thin films is discussed. Detection of band gap states, determination of porality of single and policrystalline films, control of fixed charge in passivation films are exemplifys usefulness of HAXPES using synchrotron radiation experimental stations as well as a laboratory Cr alpha (5.4 keV) HAXPES system.