[14p-1C-1~16] 13.4 Si wafer processing /MEMS/Integration technology

[14p-1C-13] Transport Phenomena for Silicon Epitaxial Growth on 450-mm-Diameter Substrate

〇AYAMI YAMADA¹, MISAKO MATSUI¹, HITOSHI HABUKA¹ (1.Yokohama Nat. Univ.)

Keywords:Silicon epitaxy,450mm wafer,Transport phenomena

The 450 mm diameter silicon wafer will be used for significantly improving the device productivity. In addition to our previous study, which evaluated the silicon epitaxial growth rate, this study discussed the transport phenomena in the reactor, in detail. The rotation rate should be increased in order to achieve the normal flow directly to the substrate surface over entire wafer.