[14p-1C-1~16] 13.4 Si wafer processing /MEMS/Integration technology

[14p-1C-15] By-product Formation in a SiHCl₃-H₂ System for Silicon Film Deposition

Ayumi Sakura¹, Ayumi Saito¹, 〇Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

Keywords:Silicon,SiHCl3,By-product

Trichlorosilane is widely used for producing silicon epitaxial film. Its by-product, SiCl₂ tends to adsorb at the inner surface of exhaust tube. This deposit is explosive and often actually causes serious accidents. Thus, its production mechanism is discussed, in this study. Following our previous report, which showed that SiCl₂ in the gas phase increased with the decreasing the hydrogen gas concentration, the SiCl₂ production mechanism is discussed.