[14p-2D-1~19] 4.4 Opto-electronics

▲ [14p-2D-10] [JSAP-OSA Joint Symposia 2015 Invited Talk] Directly Modulated Membrane Lasers on Si

〇Shinji Matsuo¹, Takuro Fujii¹, Koji Takeda¹ (1.NTT Corporation)

キーワード：semiconductor laser

Membrane lasers, in which a thin active region is sandwiched by low-index materials, are essential for achieving extremely low power consumption with high-speed direct modulation. These devices are expected to be key components of datacom and computercom interconnects. In this context, we have already developed a photonic crystal laser and a membrane DFB laser, where the use of a buried heterostructure (BH) provides both good carrierconfinement and good thermal conductivity. Fabrication cost is also an important issue. To reduce it, we have to employ large-scale wafers and Si CMOS fabrication technologies. In this talk, we will describe the fabrication of a membrane laser with its heterogeneous integration on Si substrate.