[14p-2D-1~19] 4.4 Opto-electronics

▲ [14p-2D-6] Ge/SiGe Quantum-Well Photoconductors on Si for C-band Telecommunications

Shao-Wei Chen¹, Chia-Ho Tsai¹, 〇Guo-En Chang¹ (1.Nat. Chung Cheng Univ.)

キーワード：quantum wells,Strain,Photodetectors

Ge/SiGe quantum-well (QW) systems have attracted increasing attention for Si-based integrated photonics. With the features of type-I alignment at Gamma-valley, quasi-direct bandgap, and compatibility with Si-technology, photonic devices based on Ge/SiGe QW systems such as modulators and photodetectors have been demonstrated. Unfortunately, the effects of compressive strain and quantum confinement significantly increase the direct bandgap energy from 0.8 eV to 0.88 eV, shifting the operation of these devices to ~1440 nm . To be compatible with the Erbium window of the telecommunication C-band (1530-1565 nm), the use of tensile strain is proposed. In this paper, we show primary results on the development of photodetectors based on tensile-strained Ge/SiGe QWs for telecommunication C-band applications.