[14p-2H-1~15] 6.3 Oxide electronics

▲ [14p-2H-12] Electric-field induced transport modulation in VO₂ FETs with organic parylene-C/high-k oxide hybrid gate dielectric

〇TINGTING WEI^1,2, Teruo Kanki¹, Kohei Fujiwara³, Hidekazu Tanaka¹ (1.Osaka Univ., 2.Kunming Sci Tech Univ., 3.Tohoku Univ.)

Keywords:Field-effect transistor

Recently, the electrostatic modulation in correlated oxides system utilizing field-effect transistor (FET) has been widespread applied as an effective tool to probe underlying physics, especially in the prototypical correlated oxide VO₂, which undergoes dramatic resistance change from the insulating monoclinic phase to the metallic rutile phase at T_MI=340K. Since the gate insulator of FETs is the key component for producing huge carrier modulation, many efforts have been focused on it. However, conventional dielectrics were restricted due to the defects induced to channel during theirs deposition. In addition, for a novel ionic liquid gating, whether the chemical reaction participates in the resistance change or not is still under debate. In this study, we demonstrated the resistance modulation of VO₂ thin films triggered by field effect utilizing hybrid gate insulator consisted of organic polymer insulator parylene-C and high-k material Ta₂O₅, in which parylene-C was expected as effective insulating layer to reduce interface defects.