[14p-2J-1~4] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▼ [14p-2J-1] Temperature dependence of spin-dependent tunneling conductance for the parallel configuration of Co₂MnSi MTJs with high spin polarization

〇(D)Bing Hu¹, Kidist Moges¹, Hongxi Liu¹, Yusuke Honda¹, Tetsuya Uemura¹, Masafumi Yamamoto¹ (1.Grad. School of Science and Technology, Hokkaido Univ.)

Keywords:Co2MnSi-based MTJs,Half-metallicity,High spin polarization

The temperature dependence of tunneling conductance for the parallel alignment of Co₂MnSi-based MTJs showing high TMR ratios were reported and its origin was discussed. We clarified that the characteristic temperature dependence of CMS MTJs showing giant TMR ratios is highly influenced by the half-metallicity of the CMS electrodes.