[14p-2J-1~4] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[14p-2J-3] Preparation of full-epitaxial magnetic tunneling junctions with a Mn₃Ge top electrode

〇Atsushi Sugihara¹, Kazuya Suzuki¹, Terunobu Miyazaki¹, Shigemi Mizukami¹ (1.WPI-AIMR, Tohoku Univ.)

Keywords:Spintronics,perpendicular magnetic anisotropy,magnetic tunnel junction

We grew full-epitaxial magnetic tunnel junctions with the top electrode consisting of a D022-structured Mn3Ge
film and observed magneto resistance ratio of 11.3% at RT and 23.1% at 5K.