The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

15 Crystal Engineering » 15.1 Bulk crystal growth

[14p-2K-1~17] 15.1 Bulk crystal growth

Mon. Sep 14, 2015 1:45 PM - 6:15 PM 2K (225)

座長:荻野 拓(東大),鎌田 圭(東北大)

5:45 PM - 6:00 PM

[14p-2K-16] Striations of a homogeneous SiGe crystal grown in the International Space Station

〇Yasutomo Arai1, Kyoichi Kinoshita1, Tsukada Takao2, Abe Keita2, Sumioka Sara2, Kubo Masaki2, Baba Satoshi2 (1.JAXA-ISAS, 2.Tohoku Univ.)

Keywords:International Space Sation,SiGe,Striation

Homogeneous silicon germanium alloys was grown by the TLZ(traveling Liquidus Zone) methods in the International Space Station from Feb. 2013 to Jul. 2014. We present the solid-liquid interface shapes of a SiGe single crystal and the Ge composition distribution on the interfaces in detail.