[14p-2W-11~16] 15.7 Fundamentals of epitaxy

[14p-2W-13] A conjecture for the growth processes on InAs(001)-(4×3) wetting layer surface

〇Tomonori Ito¹, Toru Akiyama¹, Kohji Nakamura¹ (1.Mie Univ.)

Keywords:InAs wetting layer surface,growth processes

Hetero epitaxial growth processes of InAs on GaAs(001) are discussed on the basis of the results obtained by ab initio-based approach. It is found that the growth processes are mainly dominated by strain relaxation to stabilize the InAs(001) wetting layer surfaces instead of the electron counting rule.