The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Fundamentals of epitaxy

[14p-2W-11~16] 15.7 Fundamentals of epitaxy

Mon. Sep 14, 2015 4:45 PM - 6:15 PM 2W (234-2(North))

座長:高橋 正光(原子力研究)

5:45 PM - 6:00 PM

[14p-2W-15] Reconsideration of Chapter 7 Crystal Growth in Oyobutsuri Handbook etc.

〇Hiromoto Susawa1 (1.Originator of DBR-LED)

Keywords:solution growth,transport phenomena,macroscopic approach

About after author initiated DBR-LED with MOCVD, solution growth was superseded by MOCVD for mass production. Equilibrium at growth interface is an advantage but disadvantage for poorly soluble solutes. Now, it is gradually overcome. Oyobutsuri handbook omits basics. A printed equation estimates thickness of grown film when initial supersaturation is dominant but the validity is unknown for alloy.