Poster presentation

[13p-PB3-1~2] 15.7 Fundamentals of epitaxy

Sun. Sep 13, 2015 1:30 PM - 3:30 PM PB3 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[13p-PB3-1] Effect of Si doping on vertical growth rate in GaAs microchannel epitaxy

〇Yosuke Mizuno¹, Masafumi Tomita¹, Daisuke Kambayashi¹, Hiroyuki Takakura¹, Muneki Iwakawa¹, Yuko Shiraki¹, Takahiro Maruyama¹, Shigeya Naritsuka¹ (1.Meijo Univ.)

1:30 PM - 3:30 PM

[13p-PB3-2] Thermal stability of α-(AlGa)₂O₃ grown by mist CVD

〇Mikio Takahashi¹, Takumi Hatakeyama¹, Takeyoshi Onuma¹, Tomohiro Yamaguchi¹, Tohru Honda¹ (1.Kogakuin Univ.)

Oral presentation

[14p-2W-11~16] 15.7 Fundamentals of epitaxy

Mon. Sep 14, 2015 4:45 PM - 6:15 PM 2W (234-2(North))

座長:高橋正光(原子力研究)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:45 PM - 5:00 PM

[14p-2W-11] STMBE observation of InAs quantum dot nucleation process by intermittent In supply method

〇Takashi Toujyou^1,2, Koichi Yamaguchi², Shiro Tsukamoto¹ (1.NIT, Anan Coll., 2.Univ. Electro-Commun.)

5:00 PM - 5:15 PM

[14p-2W-12] Mathematical Analysis of InGaAs Surface Reconstruction Distribution and
Regularity of QD Formation

〇Tomoya Konishi¹, Gavin Bell², Shiro Tsukamoto¹ (1.NIT, Anan, 2.Univ. Warwick)

5:15 PM - 5:30 PM

[14p-2W-13] A conjecture for the growth processes on InAs(001)-(4×3) wetting layer surface

〇Tomonori Ito¹, Toru Akiyama¹, Kohji Nakamura¹ (1.Mie Univ.)

5:30 PM - 5:45 PM

[14p-2W-14] Adsorption site of Mn on GaAs(001)

〇Akihiro Ohtake¹, Atsushi Hagiwara², Kenta Funatsuki², Jun Nakamura² (1.NIMS, 2.UEC-Tokyo)

5:45 PM - 6:00 PM

[14p-2W-15] Reconsideration of Chapter 7 Crystal Growth in Oyobutsuri Handbook etc.

〇Hiromoto Susawa¹ (1.Originator of DBR-LED)

6:00 PM - 6:15 PM

[14p-2W-16] Theoretical Basics on Transport Phenomena of Solution Growth